摘要： A unique metal-semiconductor-metal (MSM) photodetector has been fabricated using Sn incorporation in Ga2O3 forming SnxGa1-xO nanostructures (Ns) with platinum (Pt) metal as contacts. The mixed nanostructures (MNs) has been attributed to an increment in the detection range of UV (254 – 302 nm) with ultra-low dark current, hence a potential device in the field of long range deep-UV detector. SnxGa1-xO (Ns) are deposited on c-plane sapphire using low-pressure chemical vapour deposition (LPCVD). From the X-ray diffraction results, existence both SnxGa1-xO and tetragonal SnO2 MNs are confirmed. The XRD peak shifts in SnxGa1-xO is attributed to the integration of Sn with Ga forming SnxGa1-xO alloy with x to be ~7.3% determined from the Vegard’s law. The FESEM images show the thick diameter wire-shaped nanostructures. The absorption spectra show a trace of two absorption edges corresponding to both SnxGa1-xO and SnO2 Ns. Photo to dark current ratio (PDCR) of the fabricated photodetector is large (103) at 2 V bias with fast fall time of 0.18 s. The detector reveals self-powered behaviour also with PDCR > 104 at 0 V bias. The dark current is ultra-low (13 pA at 5 V) due to high barrier height of Pt and the UV detection range has been extended from 254 – 302 nm with a very small drop in PDCR owing to incorporation of Sn.