研究目的
To evaluate the electronic band structure of OLED materials, specifically the ionization potential and electron affinity of organic materials, using LEIPS and UPS combined with GCIB for in situ analyses and depth profiling.
研究成果
The HOMO and LUMO of C60 thin film were successfully evaluated in depth direction using LEIPS and UPS combined with GCIB. This method allows for reliable evaluation of the unoccupied state of OLED materials and is important for investigating the interface of multilayer thin films.
研究不足
The study focuses on a specific sample (C60 thin film on Au/indium tin oxide/glass substrate) and may not be directly applicable to other organic materials or device architectures without further validation.
1：Experimental Design and Method Selection:
LEIPS and UPS were incorporated into the multitechnique XPS system to evaluate the electronic band structure of OLED materials. GCIB was used for in situ depth profiling.
2：Sample Selection and Data Sources:
The sample was a 10-nm-thick buckminsterfullerene (C60) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate.
3：List of Experimental Equipment and Materials:
PHI5000 VersaProbe III multitechnique XPS (ULVAC-PHI, Japan), LEIPS system consisting of low-energy electron gun, optical lens, band-pass filter, and photomultiplier, and GCIB sputtering.
4：Experimental Procedures and Operational Workflow:
LEIPS and UPS measurements were performed with and without GCIB sputtering to obtain depth profiles. XPS depth profiling was also performed.
5：Data Analysis Methods:
The ionization potential was calculated from UPS spectra, and the electron affinity was calculated from LEIPS spectra. The band gap was determined by combining UPS and LEIPS spectra.
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