研究目的
To achieve high-performance SM-OSCs by developing a novel wide-bandgap small molecule donor, BTTzR, to reduce energy losses.
研究成果
The study successfully developed a novel wide-bandgap small molecule donor, BTTzR, for high-performance SM-OSCs, achieving a PCE of 13.9% with very small non-radiative energy losses of 0.18 eV. This work provides a new approach to material design for reducing non-radiative energy losses in OSCs.
研究不足
The study focuses on the development and optimization of BTTzR as a donor material in SM-OSCs. The limitations include the specific conditions under which the devices were tested and the need for further optimization to achieve even higher efficiencies and stability.
1：Experimental Design and Method Selection:
The study involved the design and synthesis of a new A1-A2-D-A2-A1-type SM donor material, BTTzR, based on BDT-T as the electron-donating core, TTz along with two thiophene units as electron-deficient unit (A2) and rhodanine (TR) as the end group (A1). The optical, electrical, and thermal properties as well as photovoltaic performance were investigated.
2：1). The optical, electrical, and thermal properties as well as photovoltaic performance were investigated. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The active layers were spin-coated from the blend solutions of BTTzR:Y6 in chloroform. The devices were fabricated with a conventional structure of ITO/PEDOT:PSS/BTTzR:Y6/PFN-Br/Ag.
3：List of Experimental Equipment and Materials:
Instruments used include differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), cyclic voltammetry (CV), atomic force microscopy (AFM), transmission electron microscopy (TEM), grazing incidence wide-angle X-ray scattering (GIWAXS), and resonant soft X-ray scattering (R-SoXS).
4：Experimental Procedures and Operational Workflow:
The photovoltaic performance was optimized by varying the solvent vapor annealing (SVA) time, donor/acceptor weight ratios, and cathode interface layer. The devices were characterized under the illumination of AM 1.5G, 100 mW cm-
5：5G, 100 mW cm-Data Analysis Methods:
2. 5. Data Analysis Methods: The data were analyzed using statistical techniques and software tools for fitting curves and calculating parameters such as charge carrier mobilities, energy levels, and domain sizes.
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Differential Scanning Calorimetry
DSC
Measure thermal properties of materials
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Thermogravimetric Analysis
TGA
Measure thermal stability of materials
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Cyclic Voltammetry
CV
Investigate electronic energy levels
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Atomic Force Microscopy
AFM
Probe surface morphology of materials
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Transmission Electron Microscopy
TEM
Investigate bulk morphology of materials
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Grazing Incidence Wide-Angle X-ray Scattering
GIWAXS
Probe molecular orientation and packing
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Resonant Soft X-ray Scattering
R-SoXS
Probe phase separation and domain purity
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