研究目的
To address the limitations of ZnO materials in fast-response and broadband photodetectors by developing a photogating-controlled ZnO photodetector with improved performance.
研究成果
The photogating-controlled ZnO photodetector not only effectively balances the responsivity and response time but also broadens the response range from the visible to near-infrared. The device demonstrates high-resolution imaging capabilities in both visible and near-infrared bands, showcasing its potential for commercial applications.
研究不足
The response time is still on the order of milliseconds, and the sensitivity performance of the photodetector was seriously affected by local trap states.
1：Experimental Design and Method Selection:
A photogating-controlled photodetector based on ZnO nanosheet-HfO2-lightly doped Si architecture was fabricated. The photogating effect was utilized to improve the device performance.
2：Sample Selection and Data Sources:
A lightly doped p-type silicon wafer was used as the substrate. Ultrathin ZnO nanosheets grown by the CVD method were mechanically pressed onto the HfO2 film.
3：List of Experimental Equipment and Materials:
A 40-nm-thick HfO2 layer was deposited on the surface of silicon with atomic layer deposition (ALD). Electrodes consist of 15 nm Cr and 45 nm Au were fabricated by electron-beam lithography (EBL), thermal evaporation and lift-off process.
4：Experimental Procedures and Operational Workflow:
The substrate was etched in a concentration of 3% hydrofluoric acid for 15 s to eliminate the SiO2 layer on the surface. The silicon wafer with ZnO was placed in an acetone solution, soaked for 2-4 minutes, and then rinsed with acetone and isopropyl alcohol solution to remove surface impurities.
5：Data Analysis Methods:
The photocurrent signal of the detector was recorded using a computer to achieve scan imaging point by point. The time response characterization system was used for measurements.
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Oscilloscope
Tektronix MDO3014
Tektronix
Used to measure the time response of the photodetector.
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ZnO nanosheet
Used as the active material in the photodetector for photoconductivity.
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HfO2 film
40 nm thickness
Used as a dielectric layer in the photodetector to enhance the photogating effect.
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p-type silicon wafer
1-20 Ω cm resistivity
Used as the substrate for the photodetector.
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Cr/Au electrodes
15 nm Cr / 45 nm Au
Used as the electrodes in the photodetector.
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Atomic Layer Deposition (ALD) system
Used to deposit the HfO2 layer on the silicon substrate.
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Electron-Beam Lithography (EBL) system
Used to fabricate the electrodes.
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Thermal evaporation system
Used to deposit the Cr/Au electrodes.
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Preamplifier
MODEL SR570
Used to obtain the characteristic of the photodetector.
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