研究目的
Investigating a simple technique to dope graphene by manipulating adsorbed impurity charges using a field effect transistor configuration with a ferroelectric polymer gate.
研究成果
The study demonstrates a non-destructive and reversible method for doping graphene by compensating adsorbed impurity charges using a ferroelectric polymer gate. This technique allows for both n- and p-type doping and enables selective doping by patterning gate electrodes, facilitating the integration of multiple devices on a continuous graphene film.
研究不足
The technique's effectiveness is dependent on the quality of the ferroelectric polymer gate and the uniformity of impurity charges on graphene. Optimization of the polymer's polarization properties and impurity charge distribution could enhance performance.
1：Experimental Design and Method Selection:
The study uses a field effect transistor configuration with a ferroelectric polymer gate to manipulate adsorbed impurity charges on graphene.
2：Sample Selection and Data Sources:
Monolayer graphene was grown via chemical vapor deposition and transferred onto a pre-patterned Si+/SiO2 substrate.
3：List of Experimental Equipment and Materials:
A thin film of the ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) (PVDF–TrFE) was spun coated from a solution in N-methylpyrrolidinone (NMP) and air dried. Ag was thermally evaporated over the PVDF–TrFE coated graphene for electrical measurements.
4：Experimental Procedures and Operational Workflow:
Electrical measurements were carried out under a vacuum. The drain-source current vs gate-source voltage was measured for different scan rates.
5：Data Analysis Methods:
The dopant concentration and mobility changes were analyzed based on the current response to varying gate voltages.
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