研究目的
Investigating the improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP transistor lasers through the adoption of a high heat dissipation structure.
研究成果
The study successfully demonstrated continuous-wave operation of a 1.3 μm wavelength TL up to 90 °C with a thermal resistance of 25 K W?1, which is significantly lower than previously reported values. This achievement can lead to low power consumption and a smaller footprint for long-wavelength TLs through uncooled operation.
研究不足
The study was limited to the demonstration of continuous-wave operation up to 90 °C and the estimation of thermal resistance. High-speed operation of long-wavelength TLs was not realized due to a large parasitic capacitance.
