研究目的
Investigating the fabrication of high-quality nanodisks of InGaN/GaN multiple quantum wells using neutral-beam-etching and GaN regrowth for directional micro-LEDs in a top-down structure.
研究成果
The study successfully demonstrated the fabrication of high-quality nanodisks of InGaN/GaN MQWs using NBE followed by GaN regrowth, showing improved optical properties and internal quantum efficiency. This process is a promising step towards the development of directional micro-LEDs with a buried active region in a top-down structure.
研究不足
The study focuses on the fabrication and initial characterization of nanodisks and does not fully explore the integration of these nanodisks into functional micro-LED devices or the long-term stability and performance under operational conditions.
1：Experimental Design and Method Selection:
The study involved the fabrication of nanodisks from a planar epitaxial wafer of blue InGaN/GaN multiple quantum wells using neutral beam etching followed by GaN regrowth.
2：Sample Selection and Data Sources:
The wafer consisted of 5 pairs of InGaN/GaN MQWs with InGaN wells that were 2 nm thick and 12 nm thick GaN barriers.
3：List of Experimental Equipment and Materials:
Equipment included a scanning electron microscope (SEM, Hitachi S4800), transmission electron microscopy (TEM), and a closed-cycle He cryostation (Montana Cryostation S50) for PL measurement.
4：Experimental Procedures and Operational Workflow:
The process involved electron beam lithography, Ni metal layer deposition, NBE process, GaN regrowth by MOCVD, and structural and optical characterization.
5：Data Analysis Methods:
PL intensity and emission energy were analyzed as functions of excitation laser power to determine internal quantum efficiency and the effect of regrowth on the nanodisks.
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