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Ultrafast dynamics in van der Waals heterostructures

DOI:10.1038/s41565-018-0298-5 期刊:Nature Nanotechnology 出版年份:2018 更新时间:2025-09-23 15:21:01
摘要: Van der Waals heterostructures are synthetic quantum materials composed of stacks of atomically thin two-dimensional (2D) layers. Because the electrons in the atomically thin 2D layers are exposed to layer-to-layer coupling, the properties of van der Waals heterostructures are defined not only by the constituent monolayers, but also by the interactions between the layers. Many fascinating electrical, optical and magnetic properties have recently been reported in different types of van der Waals heterostructures. In this Review, we focus on unique excited-state dynamics in transition metal dichalcogenide (TMDC) heterostructures. TMDC monolayers are the most widely studied 2D semiconductors, featuring prominent exciton states and accessibility to the valley degree of freedom. Many TMDC heterostructures are characterized by a staggered band alignment. This band alignment has profound effects on the evolution of the excited states in heterostructures, including ultrafast charge transfer between the layers, the formation of interlayer excitons, and the existence of long-lived spin and valley polarization in resident carriers. Here we review recent experimental and theoretical efforts to elucidate electron dynamics in TMDC heterostructures, extending from timescales of femtoseconds to microseconds, and comment on the relevance of these effects for potential applications in optoelectronic, valleytronic and spintronic devices.
作者: Chenhao Jin,Eric Yue Ma,Ouri Karni,Emma C. Regan,Feng Wang,Tony F. Heinz
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Investigating the unique excited-state dynamics in transition metal dichalcogenide (TMDC) heterostructures, focusing on ultrafast charge transfer, the formation of interlayer excitons, and the existence of long-lived spin and valley polarization in resident carriers.

The review highlights the rapid progress in understanding excited states in van der Waals heterostructures, particularly in TMDC heterostructures, where unique dynamical phenomena emerge due to staggered band alignment. The ultrafast charge transfer, formation of interlayer excitons, and long-lived spin and valley polarization in resident carriers hold promise for applications in optoelectronic, valleytronic, and spintronic devices. However, many outstanding questions remain regarding the mechanisms of charge transfer and spin and valley dynamics, indicating the need for further theoretical and experimental research.

The study is limited by the current understanding of the underlying mechanisms for charge transfer processes and the spin and valley relaxation dynamics in TMDC heterostructures. The role of Coulombic interactions between electrons and holes, the influence of the dielectric environment, and the effects of defects, edges, and grain boundaries are not fully accounted for. Additionally, the temporal and spatial resolution of optical measurements may average over moiré patterns formed between the layers, potentially washing out predicted trends for charge transfer times.

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