研究目的
To improve the efficiency of thermophotovoltaic (TPV) energy conversion by designing a narrowband selective emitter that emits photons at just above the bandgap energy towards the TPV photodiode.
研究成果
The design demonstrates a path for future research on larger-area all-semiconductor narrowband selective MM emitters operating at shorter wavelengths for TPV applications, with a peak absorbance of 94.8% at the wavelength of 3.47 lm.
研究不足
The design requires advanced photolithography tools for fabrication, and the performance may decrease with time due to optical property variation or compound formation at elevated temperatures.
1：Experimental Design and Method Selection:
The study numerically reports a selective metamaterial (MM) emitter design with a single layer of cylindrical structures of p-type silicon (boron-doped). The design features a peak absorbance of 94.8% at the wavelength of 3.47 lm with the smallest lateral dimension of 0.8 lm. The absorption is due to the resonance of electric and magnetic fields in the structure.
2：8% at the wavelength of 47 lm with the smallest lateral dimension of 8 lm. The absorption is due to the resonance of electric and magnetic fields in the structure.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The design is simulated with several different values of diameter (D), height (h), period (p), and doping concentration of Si.
3：List of Experimental Equipment and Materials:
The design uses cylindrical features made of boron-doped p-Si.
4：Experimental Procedures and Operational Workflow:
The electromagnetic responses of the MM emitter were simulated via CST Microwave Studio 2018 with a plane wave excitation at normal incidence. Tetrahedral meshes in the frequency domain solver were used to obtain more precise simulation for circular structures.
5：Data Analysis Methods:
The absorbance is obtained by A = 1 - R - T, where R and T are the ratios between reflected/transmitted power and incident power.
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