研究目的
Investigating the effects of postmetallization annealing (PMA) on the interface properties of GaN metal–oxide–semiconductor (MOS) structures using Al2O3 prepared by atomic layer deposition.
研究成果
PMA at 300–400 °C significantly improves the interface properties of Al2O3/GaN MOS structures, reducing interface state densities and leading to excellent C–V characteristics without frequency dispersion. The uniform distribution of the lattice constant near the interface after PMA suggests improved bond termination and bonding order configuration.
研究不足
The study is limited to Al2O3/GaN structures prepared by ALD and does not explore other deposition methods or materials. The effects of PMA at temperatures beyond 400 °C were not investigated.
1：Experimental Design and Method Selection:
The study involved the preparation of Al2O3/GaN MOS structures by atomic layer deposition (ALD) and the investigation of the effects of PMA on their interface properties.
2：Sample Selection and Data Sources:
Homoepitaxial Si-doped GaN layers grown on an n+-GaN substrate were used.
3：List of Experimental Equipment and Materials:
ALD system (SUGA-SAL1500), Ni, Ti, and Mo gate metals, HF solution for surface pretreatment.
4：Experimental Procedures and Operational Workflow:
After surface pretreatment, Al2O3 was deposited by ALD, followed by gate electrode formation and PMA in N2 ambient.
5：Data Analysis Methods:
Capacitance–voltage (C–V) characteristics were measured, and interface state densities were analyzed using the Terman and conductance methods. High-resolution transmission electron microscopy (HRTEM) and geometric phase analysis (GPA) were used to examine the lattice constant distribution near the interface.
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