研究目的
To focus on the numerical simulation and analysis of the energy band diagram along with the associated wave functions, dispersion curve, and the gain spectrum of AlN/AlGaN/AlN nano–heterostructure for UV applications.
研究成果
The optical gain of AlN/AlGaN/AlN nanoscale heterostructure has been optimized with the help of 6 × 6 Kohn–Luttinger Hamiltonian. According to the results achieved, it has been found that the peak optical gain has the order of ~700 cm at the energy ~5.165 eV and at wavelength ~2400 ?. Thus, the designed AlN/AlGaN/AlN nano–heterostructure can be suitable as a source of UV radiations.
研究不足
The optical gain calculated for this heterostructure can be enhanced by increasing the concentration of 2D carrier injection.
1：Experimental Design and Method Selection:
Numerical simulations were performed by solving the 6 × 6 Luttinger–Kohn Hamiltonian along with effective mass approximation to study the behavior of conduction band electrons and valence band holes.
2：Sample Selection and Data Sources:
The designed heterostructure is of type-I and assumed to be grown on GaN substrate.
3：List of Experimental Equipment and Materials:
AlN/AlGaN/AlN nanoscale heterostructure.
4：Experimental Procedures and Operational Workflow:
The optical gain of the heterostructure was optimized utilizing k.p method.
5：Data Analysis Methods:
The simulation results were analyzed to determine the peak optical gain and its location in the UV region.
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