研究目的
Designing and simulating a Si-based vertical nanowire heterostructure array photodetector operating at telecommunication wavelengths to achieve high responsivity.
研究成果
The Si-based vertical NW heterostructure array photodetector exhibits a remarkable responsivity beyond 0.8 A/W, several times higher than its thin film counterpart with the same equivalent thickness, showing great potential in optical telecommunications.
研究不足
The study is based on simulation, and actual experimental validation is needed. The absorption is not sufficient in the upper part of the intrinsic region, suggesting the need for further improvement in light absorption.
1：Experimental Design and Method Selection:
A coupled three-dimensional optoelectronic simulation was used to design and study the photodetector. The software package FDTD Solutions (Lumerical, Inc.) was used for optical calculation, and Sentaurus Electromagnetic Wave (EMW) Solver and Sdevice Solver module package were used for electrical modeling.
2：Sample Selection and Data Sources:
The device is composed of vertical NW array on Si substrate. Each NW is composed of InP/In0.53Ga0.47As/InP axial pin junction.
3：53Ga47As/InP axial pin junction.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: The NWs are surrounded by air. The wavelength-dependent complex refractive index used for simulating materials was obtained from Levinshtein’s work.
4：Experimental Procedures and Operational Workflow:
The reflection monitor was located above the top surface of the NW array, and the transmission monitor was located at the bottom surface of substrate to calculate the light absorbed.
5：Data Analysis Methods:
The absorption spectrum of the NW arrays was calculated by the equation A(λ) = 1 ? R(λ) ? T(λ).
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