研究目的
To propose a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits and compare its performance with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC).
研究成果
The fully on-chip integrated LED driver achieves a consistently higher efficiency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V, with a maximal percentage improvement in efficiency of 18%. Future work includes improving the integration level by integrating on-chip magnetic components and further reducing parasitic inductances.
研究不足
The study focuses on the input voltage range of 4.5–5.5 V and does not explore the integration of on-chip magnetic components or further reduction of parasitic inductances with PCB design.
1：Experimental Design and Method Selection:
The study employs a quasi-resonant floating buck converter design for high-frequency operation with high power efficiency. The design involves heterogeneous integration of GaN devices atop BCD circuits.
2：Sample Selection and Data Sources:
The study uses a custom GaN high-power FC LED and EPC2036 GaN FET for the experiments.
3：List of Experimental Equipment and Materials:
Includes EPC2036 GaN FET, custom GaN LED, BCD circuits, and PCB for validation.
4：Experimental Procedures and Operational Workflow:
The process involves FC bonding of GaN elements atop BCD circuits, followed by reflow soldering and wafer dicing. Performance is evaluated using a PCB evaluation board.
5：Data Analysis Methods:
The performance of the on-chip integrated LED driver is compared with the on-board design in terms of power efficiency within the input voltage range of 4.5–5.5 V.
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