研究目的
Exploring details on the epitaxial sputter deposition of GaN with a particular emphasis on ion damage and identifying mechanisms to improve the luminescence quality of GaN.
研究成果
Ion damage has been identified as a major source for defect formation during pulsed sputter deposition of GaN. Nitrogen is the main source of high energy particles causing defects. Strategies to reduce the impact of nitrogen species include increasing the reactor pressure during deposition and/or increasing substrate to target distance. Using surfactants in the form of liquid metal films on the substrate to shield the semiconductor from high-energy particles is an alternative strategy.
研究不足
The high kinetic energies of atoms and molecules in the plasma can induce defects in the material, which is a major drawback of sputtering for semiconductor grade materials. The investigation of defects is complex and challenging.
1：Experimental Design and Method Selection:
The study used pulsed sputter deposition (PSD) for GaN growth, focusing on ion damage effects. Monte Carlo methods were employed to model energies of backscattered and sputtered atoms.
2：Sample Selection and Data Sources:
Homoepitaxial GaN was sputtered on 5 μm GaN buffers fabricated by MOVPE on sapphire. The substrate was thermally cleaned at deposition temperatures in vacuum.
3：List of Experimental Equipment and Materials:
A conventional sputter system with a vacuum chamber, liquid gallium (7N) in a molybdenum crucible, nitrogen and argon with a purity of 6N, and a mid-frequency pulsed DC Generator were used.
4：Experimental Procedures and Operational Workflow:
The sputtering power for Ga was set to 80 W, with deposition temperatures at 730 °C. The distance between target and substrate was fixed at 100 mm.
5：Data Analysis Methods:
The morphology of the layers was investigated with SEM, and the optical properties by CL measurements. HRTEM was used for structural characterization.
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