研究目的
To analyze the on-state characteristics of the variation of lateral width (VLW) LDMOS device and compare the self-heating effect of the VLW structure with a silicon-on-oxide (SOI) substrate to that of a silicon carbide (SiC) substrate.
研究成果
The analytical model of the specific on-resistance can predict the on-state characteristic of VLW LDMOS accurately. The Si/SiC VLW LDMOS significantly alleviates the self-heating effect compared to SOI VLW LDMOS, indicating its potential for dense and reliable high-temperature circuitry.
研究不足
The study focuses on the on-state characteristics and self-heating effects of VLW LDMOS devices, with limitations including the scope of materials (SOI and SiC substrates) and the focus on simulation rather than physical experimentation.
