研究目的
Investigating the design and performance of an Integrated Modular Motor Drive (IMMD) system focusing on high power density, increased efficiency, and enhanced fault tolerance capability using GaN FETs and a permanent magnet synchronous motor (PMSM).
研究成果
An overall system power density higher than 1 kW/lt can be achieved with 98% motor drive efficiency and 96% motor efficiency for an IMMD having 8 kW output power. Considering also the improvements on the system fault tolerance, the performance of the IMMD system has been proven to be successful to replace the conventional motor drive systems using the design process presented here.
研究不足
The potential drawbacks of the proposed design are the increased complexity of the motor drive control. Active voltage balancing should be applied to the series connected modules in order to avoid voltage mismatch in the case of unbalanced load. Moreover, potential circulating currents between parallel connected modules should be investigated and measures should be taken.
1：Experimental Design and Method Selection:
The design is based on a PMSM and GaN FETs, with fractional slot concentrated windings used on the stator. An extended motor drive inverter topology is proposed where 2-level voltage source inverters are connected both in series and parallel.
2：Sample Selection and Data Sources:
The system parameters used in the design process are presented, including total output power, rated speed, DC link voltage, motor efficiency aim, and drive efficiency aim.
3：List of Experimental Equipment and Materials:
Includes ANSYS/Maxwell for motor performance validation, MATLAB/Simulink for motor drive performance simulation, and specific GaN FETs and IGBTs for comparison.
4：Experimental Procedures and Operational Workflow:
The design process is divided into two parts: design of the motor and design of the drive. The performance of the motor is analyzed using ANSYS/Maxwell simulation environment, and drive loss is analyzed using a specific model.
5：Data Analysis Methods:
The analytical model used in the loss calculations is shown, including transistor forward conduction loss, transistor switching loss, transistor reverse conduction loss, and loss on Coss capacitance or diode reverse recovery loss for IGBT case.
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