研究目的
Investigating the creation of tensilely strained Ge films on Si substrates through physical vapor deposition of solid Ge sources for light emission applications.
研究成果
The creation of epitaxial Ge films, with high tensile strain, on Si substrates using a toxin-free environmentally friendly approach, is important for the development of Si-compatible active photonic devices, a central enabling technology key to achieving optical data transmission.
研究不足
The PL data in the infrared regime is somewhat noisy, making PL detections challenging. The broad single peak in the PL spectrum might result from direct band gap PL alone, or from a superposition of direct band gap and indirect band gap PL that have similar wavelengths.
1：Experimental Design and Method Selection:
The experiment involved the creation of Ge films on Si substrates using physical vapor deposition of solid Ge sources in a compact hot-wall chemical vapor deposition (CVD) system.
2：Sample Selection and Data Sources:
Ge films were grown on native oxide-terminated or HF-terminated Si(100) substrates.
3：List of Experimental Equipment and Materials:
A compact hot-wall CVD system, solid Ge sources (purity:
4：9999%), and ultra-high purity Ar gas (purity:
5：999%) were used. Experimental Procedures and Operational Workflow:
The Ge source and substrates were cleaned and placed in a quartz growth boat, which was then loaded into the CVD system. The system was pumped down, and Ar gas was introduced to maintain a pressure range of
6：5–10 Torr. The furnace temperature was increased to 1000 °C for Ge film deposition. Data Analysis Methods:
The structural properties of the Ge films were characterized by x-ray diffraction and Raman spectroscopy. Photoluminescence measurements were carried out using a 532-nm continuous-wave excitation laser and a grating-based spectrometer equipped with a thermoelectric-cooled PbS detector.
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