研究目的
To present a continuously tunable resonator with a novel triangular doped area on a silicon substrate, enabling new tradeoffs and behaviors through co-design of the resonator and its tunable element.
研究成果
The co-design method successfully integrates active and passive parts into a continuously tunable resonator on a silicon substrate, offering a 50% frequency variation with low switching voltage. Future work aims to improve the model and device performances.
研究不足
Slight differences in insertion loss levels between simulation and measurement due to approximations in doping quantities and junction shape modelization. Potential improvements include reducing the intrinsic layer, using a thinner substrate, or etching the substrate under the doped area.
1：Experimental Design and Method Selection:
The resonator is designed on a silicon substrate with a triangular doped area acting as a tunable element. The co-design approach integrates the active and passive parts in the same flow.
2：Sample Selection and Data Sources:
A 675-μm-thick p-type high-resistivity silicon substrate is used. The microstrip access line and resonator dimensions are specified for 50-Ω matching impedance and low resonant frequency.
3：List of Experimental Equipment and Materials:
Silicon substrate, doping materials (n+ and p+ layers), metallization materials, and simulation software (Athena and Atlas from Silvaco, HFSS).
4：Experimental Procedures and Operational Workflow:
The manufacturing involves doping and metallization steps. The junction's electrical characteristics are analyzed, and resistivity profiles are imported into microwave design simulations.
5：Data Analysis Methods:
The resonator's electromagnetic behavior is simulated with varying resistivity to predict tunability. Measurements are performed with a vector network analyzer and compared with simulations.
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