研究目的
Investigating the photoelectric properties of ZnO1-x/graphene heterostructures for potential application in visible light to near-infrared detection devices.
研究成果
The ZnO1-x/graphene heterostructures exhibited improved photoelectric properties, including enhanced absorbance in visible and near-infrared regions and significantly increased currents under irradiation. The higher current gain suggests potential applications in visible light to near-infrared detection devices.
研究不足
The study focuses on the photoelectric properties of ZnO1-x/graphene heterostructures under specific conditions (e.g., 700 nm light irradiation). Further research could explore performance under a broader range of wavelengths and environmental conditions.
1：Experimental Design and Method Selection:
The study involved constructing ZnO1-x/graphene heterostructures by depositing ZnO1-x layer through radio frequency magnetron sputtering onto silicon wafers with SiO2 layer and transferring graphene via a wet method.
2：Sample Selection and Data Sources:
Samples included pure ZnO1-x films and ZnO1-x/graphene heterostructures. Data were collected through EDX, Raman spectroscopy, UV-vis absorption spectra, and current-voltage measurements.
3：List of Experimental Equipment and Materials:
Equipment included a reactive radio frequency magnetron sputtering system, FE-SEM, Raman test system, UV-vis-NIR spectrometer, and Keithley 2450 system. Materials included silicon wafers, copper foil with graphene films, and PMMA.
4：Experimental Procedures and Operational Workflow:
The process involved depositing ZnO1-x, transferring graphene, and fabricating electrodes. Characterization included elemental analysis, Raman spectroscopy, UV-vis absorption, and I-V measurements.
5：Data Analysis Methods:
Data were analyzed to compare absorbance, current changes, and absolute current gains between samples.
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