研究目的
To understand and predict the actual in-circuit behavior of GaN transistors through electrical and thermal modeling, and to discuss the requirements and limitations when directly measuring in-circuit behavior.
研究成果
The chapter concludes that accurate modeling and measurement of GaN transistors in high-performance power conversion circuits require sophisticated techniques and equipment. The next chapter will explore how the superior properties of GaN transistors yield significant performance improvements in hard-switching applications.
研究不足
The circuit modeling results are only as good as the accuracy and complexity of the circuit model used. Measurement technology is limited by the bandwidth of oscilloscopes and probes, which may not fully capture the high-speed switching behavior of GaN transistors.
1：Experimental Design and Method Selection:
The chapter discusses the electrical and thermal modeling of GaN transistors, including the use of SPICE models for equivalent circuits and the methodology for thermal modeling.
2：Sample Selection and Data Sources:
The models are based on the characteristics of GaN transistors, with specific examples provided from the EPC2001 device model.
3：List of Experimental Equipment and Materials:
Equipment includes oscilloscopes, voltage probes, and coaxial shunts for measurement, as well as SPICE simulation tools for modeling.
4：Experimental Procedures and Operational Workflow:
The process involves creating equivalent circuit models for GaN transistors, simulating their behavior under various conditions, and comparing these simulations with experimental measurements.
5：Data Analysis Methods:
The analysis includes comparing simulated and measured efficiency for varying levels of model complexity, and evaluating the impact of probe location on practical voltage measurement.
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Tektronix TPP0850
TPP0850
Tektronix
Voltage probe
-
EPC2001
EPC2001
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
EPC2007
EPC2007
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
EPC2010
EPC2010
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
EPC2012
EPC2012
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
EPC2014
EPC2014
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
EPC2015
EPC2015
Efficient Power Conversion Corporation
Enhancement-mode Power Transistor
-
SDN-414-01
SDN-414-01
T & M Research Products
Co-axial current shunt
-
SDN-414-025
SDN-414-025
T & M Research Products
Co-axial current shunt
-
SDN-414-05
SDN-414-05
T & M Research Products
Co-axial current shunt
-
SDN-414-10
SDN-414-10
T & M Research Products
Co-axial current shunt
-
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