研究目的
To evaluate the superior performance capabilities of GaN transistors over silicon MOSFETs in resonant and soft-switching applications, specifically in a high-frequency 48 V intermediate bus converter with a 12 V output.
研究成果
GaN transistors offer significant advantages over Si MOSFETs in resonant and soft-switching applications, including reduced output charge and gate charge, leading to shorter ZVS transition periods and higher efficiency. The experimental results demonstrate a 1% improvement in peak efficiency and a 25% decrease in power loss for the GaN-based converter.
研究不足
The study focuses on a specific application (48 V to 12 V bus converter) and may not cover all possible resonant and soft-switching scenarios. The comparison is limited to GaN transistors and Si MOSFETs with similar on-resistance.
1：Experimental Design and Method Selection:
The study compares GaN transistors and Si MOSFETs in a resonant and soft-switching converter design, focusing on zero-voltage switching (ZVS) and zero-current switching (ZCS) techniques.
2：Sample Selection and Data Sources:
Two bus converters were built, one with GaN transistors and another with Si MOSFETs, operating at a switching frequency of
3：2 MHz. List of Experimental Equipment and Materials:
The designs used identical layouts, PCB layers, and transformer designs to ensure a fair comparison.
4：Experimental Procedures and Operational Workflow:
The performance of both converters was evaluated in terms of efficiency, power loss, and switching transitions.
5：Data Analysis Methods:
The efficiency and power loss were compared across different output currents, and the ZVS transition periods were measured.
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