研究目的
Examining the RF capabilities of GaN transistors, particularly enhancement-mode transistors, and highlighting specific RF applications that can benefit from their adoption.
研究成果
The GaN transistor shows excellent RF characteristics with stable gain in excess of 20 dB, and a drain efficiency approaching 60% at the 1 dB compression point. It yields a higher gain than LDMOS FETs, with comparable drain efficiency, and can span a bandwidth of as much as 3 GHz.
研究不足
The thermal dissipation of an RF device is significantly higher than equivalently sized switching devices, necessitating efficient heat dissipation to the environment. The lack of a package may present thermal limitations that can be overcome by design.
1：Experimental Design and Method Selection:
The methodology involves measuring s-parameters of the device under specific bias conditions using a vector network analyzer (VNA).
2：Sample Selection and Data Sources:
The enhancement-mode GaN transistor EPC8009 is used for RF characteristics testing.
3：List of Experimental Equipment and Materials:
Vector network analyzer, bias tees, microstrip transmission lines, and the EPC8009 GaN transistor.
4：Experimental Procedures and Operational Workflow:
The device is mounted to a test fixture, calibrated using TRL or SOLT methods, and s-parameters are measured.
5：Data Analysis Methods:
S-parameters are analyzed for stability, gain, and efficiency to design an RF amplifier.
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