研究目的
Investigating the influence of different annealing atmospheres (N2, O2, and CO+N2) on the microstructure and optical properties of ZnO thin films deposited on silicon substrates.
研究成果
Annealing atmosphere significantly influences the microstructure and optical properties of ZnO thin films. Films annealed in CO+N2 atmosphere exhibit the best crystal quality and luminescence performance, while those annealed in N2 show improved structural quality and larger grain sizes. The study provides insights into optimizing annealing conditions for ZnO thin films for optoelectronic applications.
研究不足
The study focuses on the effects of annealing atmospheres on ZnO thin films' microstructure and optical properties, but does not explore the impact of varying annealing temperatures or times. The research is limited to ZnO films deposited on Si substrates, and the findings may not be directly applicable to films deposited on other substrates or with different deposition parameters.
1：Experimental Design and Method Selection:
ZnO thin films are deposited on Si (100) substrates using radio frequency magnetron sputtering. The films are then annealed at 800°C in different atmospheres (N2, O2, CO+N2) for 1h.
2：1h. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Si (100) substrates are used for deposition.
3：List of Experimental Equipment and Materials:
Magnetron sputtering system with an rf power supply, Zn target, Ar gas, X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrophotometer, Raman spectrometer.
4：Experimental Procedures and Operational Workflow:
Substrates are cleaned ultrasonically in acetone and alcohol, dried in air. Deposition is carried out at 200°C for 30min under Ar atmosphere. Annealing is performed at 800°C for 1h in different atmospheres.
5：Data Analysis Methods:
XRD for crystalline quality, SEM for surface morphology, PL for optical properties and defects, Raman spectroscopy for crystal quality.
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