研究目的
To study the coupled thermal, plasma, and elastic waves in an unbounded semiconductor medium with a cylindrical hole during the photo-thermoelastic process using the theory of generalized photo-thermoelasticity under fractional order derivative.
研究成果
The study provides analytical expressions for temperature, displacement, density of carrier, radial stress, and hoop stress in the medium. The results show significant effects of the fractional parameter and thermal relaxation time on the physical quantities. These findings can aid in designing semiconductor elements and new materials for specific engineering requirements.
研究不足
The study is limited to a homogeneous, isotropic infinite semiconducting medium with a cylindrical hole. The effects of material inhomogeneity and anisotropy are not considered. The numerical inversion method may introduce errors in the results.
1：Experimental Design and Method Selection:
The study uses the theory of generalized photo-thermoelasticity under fractional order derivative to analyze the interaction of thermal, plasma, and elastic waves in a semiconductor medium with a cylindrical hole. Laplace transform techniques and the eigenvalue approach are employed for solving the problem.
2：Sample Selection and Data Sources:
A homogeneous, isotropic infinite semiconducting medium with a cylindrical hole is considered. The material constants are taken from recent references for silicon (Si) like material.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned in the paper.
4：Experimental Procedures and Operational Workflow:
The problem is solved analytically in the Laplace transform domain using the eigenvalue approach, and the inversion of Laplace transforms is carried out numerically using Stehfest's method.
5：Data Analysis Methods:
The numerical results are displayed graphically to analyze the effects of thermal relaxation time and fractional order parameters on the plasma, thermal, and elastic waves.
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