研究目的
To present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 μm–BCD technology, aiming at cost-effective systems-on-chip (SoC) based on SiPM detectors.
研究成果
The developed SiPMs in a 0.16 μm–BCD technology show promising performance with a peak PDE surpassing 33%, comparable correlated noise components, and timing response to best-in-class commercial SiPMs. Despite higher DCR density, the technology enables the development of cost-effective SoC based on SiPM detectors.
研究不足
The DCR density of the fabricated SiPMs is higher than that of the best detectors on the market, indicating a limitation in noise performance compared to state-of-the-art commercial SiPMs.
1：Experimental Design and Method Selection:
The study involved the design and characterization of SiPMs in a 0.16 μm–BCD technology, focusing on their performance metrics such as PDE, DCR, crosstalk probability, afterpulsing, and timing response.
2：16 μm–BCD technology, focusing on their performance metrics such as PDE, DCR, crosstalk probability, afterpulsing, and timing response.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Two SiPM designs were fabricated: a shallow SiPM and a deep SiPM, with different avalanche region depths.
3：List of Experimental Equipment and Materials:
Equipment included a pulsed laser at 850 nm, a Tektronix 4104B oscilloscope, and an Analog Devices Inc. AD8000 current feedback amplifier (CFA) for readout.
4：Experimental Procedures and Operational Workflow:
The SiPMs were characterized under various conditions, including different excess bias voltages and temperatures, to measure their performance metrics.
5：Data Analysis Methods:
Data analysis involved building histograms of pulse heights, calculating PDE, DCR, crosstalk probability, afterpulsing probability, and timing jitter.
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