摘要： Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We prepared a new p-type wide-gap oxide, SnNb2O6 foordite, with its VBM composed of Sn 5s orbitals. To discuss carrier generation, we prepared both p-type and n-type SnNb2O6 by controlling the annealing conditions. The carrier mobility and density were 3.8 × 10?1 cm2 V?1 s?1 and 3.7 × 1018 cm?3, respectively, for the p-type sample and 9.9 cm2 V?1 s?1 and 7.5 × 1015 cm?3, respectively, for the n-type sample. The crystal structure of SnNb2O6 foordite consists of two types of alternating layers, Sn and Nb2O6 octahedra, where three nonequivalent oxygen sites exist. Six oxygens in the chemical formula of SnNb2O6 are distributed at the three sites in pairs, where the oxygens in three nonequivalent sites were named O1?O3. Hole and electron carriers were considered to be generated by Sn4+-on-Nb5+ substitutional defects (SnNb??) and oxygen vacancies of O1 and O2 that are not bonded to Sn (VO1/O2′), respectively. Therefore, we concluded that it is essential to control SnNb?? and VO1/O2′ to control the semiconducting properties such as the carrier type and carrier density.