摘要： Cobalt germanides have been widely studied as semiconductor contact materials, but recent theoretical studies suggest that they may also be excellent catalysts for methane steam reforming with stabilities and activities comparable to more expensive noble metal catalysts. We have sputter deposited CoGe alloy films and characterized their structure and morphology after post-deposition annealing in high vacuum up to 1000 °C. We used X-ray photoelectron spectroscopy to study the initial oxidation of amorphous and crystalline CoGe alloy surfaces under low pressures of O2 and H2O. The oxidation rate in O2 was found to be faster for an amorphous CoGe surface compared to a crystalline surface. We also found that there was little difference in the oxidation rate in H2O for either amorphous or crystalline surfaces. During O2 oxidation, the crystalline surface preferentially forms GeO and the amorphous surface preferentially forms GeO2. We have also observed preferential oxidation of Ge in the CoGe thin films. During temperature programmed desorption studies, we found that GeO desorption begins near 350 °C and that GeO2 decomposes to GeO and desorbs near 700 °C. More studies of CoGe catalysts are warranted, however GeO desorption may be a concern under reaction conditions when the film is subjected to an oxidizing environment.