研究目的
Investigating the ballistic electron emission microscopy characteristics at the Au/Ge(001) interface using an ab initio nonequilibrium Keldysh formalism to accurately determine the Schottky barrier.
研究成果
The study successfully applies an ab initio nonequilibrium Keldysh formalism to accurately determine the Schottky barrier at the Au/Ge(001) interface, identifying two distinct values associated with different atomic registries. The methodology provides a significant improvement in the accuracy of Schottky barrier determination, with potential applications in the characterization of metal-semiconductor interfaces.
研究不足
The study is limited by the assumption of ballistic electron transport and the need to account for temperature effects near the Schottky barrier onset. The accuracy of the Schottky barrier determination is also dependent on the quality of the experimental data and the theoretical model used.
1：Experimental Design and Method Selection:
The study employs an ab initio nonequilibrium Keldysh formalism based on an N-order renormalization technique to compute I(V) characteristics.
2：Sample Selection and Data Sources:
The experiments were conducted on a Au/Ge(001) interface under ultrahigh vacuum and low-temperature conditions.
3：List of Experimental Equipment and Materials:
A Ge(100) wafer (n-type, Sb-doped) was used, with Au contacts fabricated by thermal evaporation. BEEM measurements were performed using a modified commercial STM equipped with a low-noise variable-gain current amplifier.
4：Experimental Procedures and Operational Workflow:
BEEM spectra were acquired under dark conditions, with tunneling current IT in the range
5：5 to 5 nA, and at T = 80 K. Each spectrum consisted of 100–3600 averaged curves. Data Analysis Methods:
The ballistic current was analyzed using a power-law approximation and the Fermi-Dirac distribution to account for temperature effects.
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