研究目的
Investigating the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance.
研究成果
The incorporation of an ultrathin La2O3 layer significantly enhances the channel mobility while maintaining a sufficiently positive VT, but leads to VT instability under positive DC electric field stress. A simple RTA-FGA in 5% H2 balanced in 95% N2 mixture slightly reduced the peak mobility and the VT but significantly improves the VT instability.
研究不足
The VT shift under 4MV/cm positive bias stressing remains high, indicating that the FGA conditions need further optimization.
1：Experimental Design and Method Selection:
The study involved fabricating lateral MOSFETs on an Al-doped p-type epitaxial layer on a highly doped n-type 4H-SiC substrate. The impact of La2O3 thickness and FGA conditions on MOSFET performance was investigated.
2：Sample Selection and Data Sources:
Samples were prepared with varying La2O3 thicknesses (0.3 to 1.0 nm) and subjected to FGA at 800°C for 5 min.
3：3 to 0 nm) and subjected to FGA at 800°C for 5 min.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a molecular beam epitaxy (MBE) system for La2O3 deposition, an ALD system for SiO2 deposition, and a rapid thermal annealing (RTA) system for annealing processes.
4：Experimental Procedures and Operational Workflow:
The process involved La2O3 deposition, SiO2 deposition, post deposition annealing in N2O, gate electrode formation, ohmic contact formation, and FGA.
5：Data Analysis Methods:
MOSFET DC characteristics and stress tests were conducted with a Keithley 4200 semiconductor parameter analyzer. Capacitance–Voltage (C–V) characteristics were measured using 4280 LCR meter.
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