研究目的
Investigating the preparation and properties of ZnAl2O4 thin films for ultraviolet emitting phosphor through deposition of ZnO on c-sapphire substrate and thermal diffusion process.
研究成果
The study successfully prepared ZnAl2O4 thin films for ultraviolet emitting phosphor and characterized their properties. It was found that annealing time significantly affects the film's thickness and luminescent properties, with optimal results observed for films annealed for 100 hours. Longer annealing times led to Zn re-evaporation and thinner films, impacting the UV emission properties.
研究不足
The study is limited by the potential for Zn re-evaporation during longer annealing times, which affects the thickness and properties of the ZnAl2O4 film. The influence of surface scattering and the need for precise control of annealing conditions are also noted.
1：Experimental Design and Method Selection:
The study used an RF magnetron sputtering device for deposition of ZnO layer on c-plane sapphire substrate, followed by annealing at 1000 oC in air for various durations. Structural and luminescent properties were evaluated by X-ray diffraction, FE-SEM, and cathodoluminescence.
2：Sample Selection and Data Sources:
ZnO layer was deposited at 180 oC for 15 min. in the atmosphere of 25%O2 diluted with Ar. RF power was kept at 100 W during deposition.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering device, c-plane sapphire substrate, ZnO.
4：Experimental Procedures and Operational Workflow:
After deposition, the films were annealed for 2, 10, 100, and 200 hours at 1000 oC in air. The properties were then evaluated.
5：Data Analysis Methods:
The properties were analyzed using X-ray diffraction, FE-SEM, and cathodoluminescence measurements.
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