研究目的
Investigating a new design of commutable CNT emitters cathode with an on-chips gate for field emission applications.
研究成果
The buried gated cathode permits high modulation of the emitted current with a small bias on the gate, increases current stability over time, and significantly improves robustness. These results open a promising way to make CNTs cold cathode highly reliable for industrial purposes.
研究不足
The buried gated cathode requires a higher bias on the gate for a comparable on/off ratio to in-plane gated cathodes, attributed to its smaller electrostatic influence on the summit of emitters. However, the design allows for an increased bias on the gate without critical destruction, potentially improving the on/off ratio.
