研究目的
Investigating the impact of the precursor on pre-deposited stack materials in the fabrication of memristive devices using the atomic layer deposition technique.
研究成果
The ALD technique was successfully used to fabricate HfO2-based memristive devices with enhanced properties. The study revealed that the use of ozone as an oxidant in the ALD process leads to the oxidation of the Ti layer, forming an additional TiOx layer that significantly impacts the device's electrical characteristics. This modification resulted in devices with forming-free behavior, self-limiting current, and non-crossing hysteretic current-voltage features, making them suitable for nonvolatile memory applications. The findings underscore the importance of precursor selection in ALD processes and its impact on device performance.
研究不足
The study highlights the interaction between the ALD precursors and pre-deposited layers, which can lead to unconsidered phases and modifications in the device stack. The specific impact of different precursors and the need for further optimization in the ALD process are noted as areas for future research.
1：Experimental Design and Method Selection:
The study employs the ALD technique for growing thin-film oxides, specifically HfO2, on a highly doped Si substrate with an SiO2 film and a Ti electrode. The methodology includes structural and electrical characterization to understand the impact of the precursor on the stack materials.
2：Sample Selection and Data Sources:
Commercial Si (highly doped)/thermally oxidized SiO2 (120 nm) substrates of 1 cm2 size were used. The Ti layer (20 nm) was sputtered on top, followed by ALD process for HfO2 deposition.
3：List of Experimental Equipment and Materials:
Equipment includes a Keithley 4200 unit for electrical characterization, X-ray reflectometry, atomic force microscopy, and secondary ion mass spectroscopy for structural analysis. Materials include HfO2, SiO2, Ti, and Pd/Co for top electrodes.
4：Experimental Procedures and Operational Workflow:
The process involves ALD deposition of HfO2 using O3 and TDMAH as precursors, followed by structural and electrical characterization to analyze the stack's properties and performance.
5：Data Analysis Methods:
Data analysis involves comparing electrical properties before and after ALD deposition, structural analysis to identify modifications in the stack, and impedance measurements to model the device's electrical response.
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