研究目的
Investigating the insensitivity of planar cathodes based on oxidized nanocrystalline silicon to ambient gas pressure.
研究成果
The planar cathodes based on nc-Si demonstrate insensitivity to ambient gas pressure, operating normally even at 1×10-2 Pa. Exposure to hydrogen increases emitted electrons with higher energy, suggesting that scattering at the nc-Si interface is suppressed by hydrogen adsorption.
研究不足
The study is limited to the investigation of electron emission properties in specific ambient gases (oxygen and hydrogen) and does not explore the effects of other gases or higher pressures.
1：Experimental Design and Method Selection:
The study investigates the emission current as a function of the gate voltage and the energy distributions of emitted electrons from the device in vacuum and in oxygen or hydrogen atmosphere using an energy analyzer.
2：Sample Selection and Data Sources:
The cathode is composed of nc-Si particles covered with thin oxide layers sandwiched between an n-type silicon substrate and a thin metal (Au) top electrode.
3：List of Experimental Equipment and Materials:
An energy analyzer consisting of parallel copper-meshes and a collector was used.
4：Experimental Procedures and Operational Workflow:
The analyzer was placed about 1cm above the device to measure the collector currents as a function of the retarding voltage in different atmospheres.
5：Data Analysis Methods:
The energy distributions of emitted electrons were analyzed to understand the effect of ambient gas on electron emission.
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