研究目的
Investigating the application of TiOx and AlOx underlying layers for the La-doped lead zirconate titanate (PLZT) capacitor in ferroelectric random access memory (FRAM) to achieve high polarization values and lower cell area, while maintaining high production yield.
研究成果
The AlOx underlying layer for Pt BE in PLZT capacitors was found to be more suitable than TiOx-UL for achieving high polarization values and high production yield in FRAM. The study suggests that the choice of underlying layer material is crucial for optimizing the performance and producibility of FRAM.
研究不足
The study found that while TiOx-UL and AlOx-UL layers improved polarization values, the TiOx-UL led to higher failed bit ratios due to higher surface roughness and charged defect density. The crystalline quality and surface roughness of underlying layers significantly affect the production yield and electric properties of FRAM.
1：Experimental Design and Method Selection:
The study involved the fabrication of ferroelectric capacitors with different underlying layers (Ti-UL, TiOx-UL, AlOx-UL) for Pt bottom electrodes to investigate their impact on the electric properties and production yield of FRAM.
2：Sample Selection and Data Sources:
Samples were prepared on SiO2-coated Si substrates with transistors fabricated in advance.
3：List of Experimental Equipment and Materials:
Equipment included sputtering systems for deposition, rapid thermal annealing (RTA) for oxidation, X-ray diffraction (XRD) for crystalline quality analysis, atomic force microscopy (AFM) for surface roughness measurement, and secondary ion mass spectroscopy (SIMS) for inter-diffusion analysis.
4：Experimental Procedures and Operational Workflow:
The process involved depositing underlying layers, Pt BE, PLZT layer, and IrOx top electrode, followed by annealing and characterization.
5：Data Analysis Methods:
Polarization properties were measured using a Sawyer-Tower circuit, and production yield was evaluated by probing 256-Kb FRAM test circuits.
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