研究目的
Investigating the saturation of arsenic dopant concentration in the nano-apex of Si tips through a controllable oxidation process to improve tip-to-tip uniformity and enhance electron emission.
研究成果
The forming of saturated arsenic concentration at tip-apex improves the tip-to-tip uniformity of the dopant concentration in an array, enhancing electron emission. This approach can be used to acquire high performance Si-based vacuum electronic devices.
研究不足
The study is limited to Si tips with arsenic dopant and may not be directly applicable to other materials or dopants. The process requires precise control of oxidation time and conditions.
1：Experimental Design and Method Selection
The study employed a controllable oxidation process to achieve saturated arsenic dopant concentration in Si nano-tips. Numerical simulations based on Fick’s law and experimental investigations were conducted.
2：Sample Selection and Data Sources
N++ (100) single crystalline Si wafer with arsenic dopant concentration of ~1019/cm3 was used as substrate. Si tips and gated arrays (40×40) were fabricated through a top-down procedure.
3：List of Experimental Equipment and Materials
Filtered cathodic vacuum arc deposition system, vacuum chamber (~5.0×10-6 Pa), Indium tin oxide (ITO) coated glass as anode.
4：Experimental Procedures and Operational Workflow
Thermal oxidation was performed to sharpen the blunt-“tips” for obtaining sharp tips with a similar geometrical profile. The oxidation time varied based on the top-diameter of the tips.
5：Data Analysis Methods
Electron energy loss spectroscopy (EELS) investigations were used to measure dopant density. Field emission studies were performed on gated tip arrays.
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