研究目的
Investigating the optimization of annular polishing parameters for silicon carbide to achieve ultralow surface roughness.
研究成果
The study concludes that the annular polishing process is greatly influenced by the polishing solution, polishing pad material, polishing time, and rotation speed of polishing disc. Optimized parameters include a rotating speed of 140 r/min, a polishing time of 150 min, using a polyurethane polishing pad and diamond suspension solution, achieving a surface roughness of 1.31 nm for RB-SiC.
研究不足
The study assumes full contact between specimen and polishing disc without separation, constant applied pressure, and constant proportional constant k, which may not fully capture the dynamic nature of the polishing process.
1：Experimental Design and Method Selection:
The study first analytically investigates the complex coupling of motions in annular polishing based on the Preston equation to derive influential parameters for material removal. Systematic annular polishing experiments of reaction-bonded silicon carbide are then conducted to investigate the influence of derived parameters on polished surface quality.
2：Sample Selection and Data Sources:
Reaction-bonded silicon carbide specimens are used in the experiments.
3：List of Experimental Equipment and Materials:
The experiments utilize an annular polisher consisting of a polishing disc, a carrier disc, and a swinging bracket. Polishing solutions include alumina, silica, and diamond suspensions. Polishing pads include cot, matte leather, synthetic leather, and polyurethane.
4：Experimental Procedures and Operational Workflow:
The influence of polishing solution material, polishing pad material, polishing time, and rotation speed of polishing disc on surface roughness is investigated through systematic experiments.
5：Data Analysis Methods:
Surface roughness is measured by a Taylor Hobson surface profiler, and the results are analyzed to determine the optimal polishing parameters.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
