研究目的
Investigating the Li permeation through nano-sized amorphous Si layers as a function of layer thickness and temperature to understand the Li transport parameters in silicon.
研究成果
The study concludes that Li permeation through amorphous silicon is diffusion-controlled and not limited by the silicon/Li metal oxide interface. The Li permeability increases significantly with decreasing silicon layer thickness, attributed to a transition from trap-limited slow Li diffusion in thicker layers to interstitial fast Li diffusion in thinner layers.
研究不足
The study is limited to amorphous silicon layers and does not explore crystalline silicon. The upper limit of measurable Li permeability is constrained by the experimental setup.
1：Experimental Design and Method Selection:
The study involves embedding Si layers between 6Li and 7Li isotope enriched oxide based Li reservoirs and analyzing the thermally induced isotope exchange through silicon layers and interfaces using Secondary Ion Mass Spectrometry (SIMS).
2：Sample Selection and Data Sources:
The samples consist of multilayers with Si layer thicknesses between 12 and 95 nm, prepared by ion-beam sputter deposition.
3：List of Experimental Equipment and Materials:
The experiments utilized an ion-beam coater for deposition, a commercial rapid thermal annealing setup for annealing, and SIMS for depth profiling.
4：Experimental Procedures and Operational Workflow:
The multilayers were annealed at temperatures up to 500°C, and the Li isotope fractions were monitored over time.
5：Data Analysis Methods:
The Li permeability was calculated from the isotope exchange data, and the activation enthalpy of Li permeation was determined from the temperature dependence of the permeability.
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