研究目的
Study magnetoresistance oscillations in n-type InSb whiskers with tin doping concentration in the vicinity to metal-insulator transition under influence of compressive strain at low temperatures.
研究成果
The study revealed the presence of Berry phase in strained InSb whiskers, indicating a transition to a topological insulator phase under strain. The strain also influenced the magnetoresistance behavior, effective mass, and Fermi energy of the whiskers.
研究不足
The study is limited to n-type InSb whiskers with specific doping concentrations and under specific strain conditions. The findings may not be directly applicable to other materials or different strain configurations.
1：Experimental Design and Method Selection:
The study involved the longitudinal magnetoresistance measurements of n-type InSb whiskers under strain at low temperatures and high magnetic fields.
2：Sample Selection and Data Sources:
InSb whiskers with tin doping concentrations of 6·1016–6·1017 сm–3 were selected.
3：List of Experimental Equipment and Materials:
A helium cryostat, Bitter magnet, Keithley 224 source, and Cu–CuFe thermocouple were used.
4：Experimental Procedures and Operational Workflow:
The whiskers were strained by mounting them on substrates with different thermal expansion coefficients. Magnetoresistance was measured in magnetic fields up to 10 T at temperatures from
5：2 to 50 K. Data Analysis Methods:
The Shubnikov–de Haas oscillations were analyzed to determine parameters like effective mass, Fermi energy, and g-factor.
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