研究目的
To develop and use numerical device simulations to examine the device performance potential, design optimization, and device variability issues for silicon two-qubit quantum gates based on the detuning mechanism.
研究成果
The study projects that a fast switching speed greater than 1 GHz with a high fidelity greater than 90% can be achieved in a silicon-based controlled phase gate with a double quantum dot (DQD) spacing of ~25 nm, using a low operation voltage. It highlights the importance of addressing device-to-device variability for scaling up silicon-based quantum computing and proposes a method to mitigate variability effects through co-design with classical control circuitry.
研究不足
The study assumes a low temperature of 20 mK and does not quantitatively elucidate the impact of the valley degree of freedom in cases where the valley splitting is smaller than the energy scales of interest. The phenomenological decoherence model used may not capture all decoherence mechanisms.
1：Experimental Design and Method Selection:
A multiscale simulation approach is used, combining numerical device simulations based on the configuration interaction (CI) method to characterize many-body energy levels and wave functions, and solving the Lindblad Master equation to assess key device performance metrics.
2：Sample Selection and Data Sources:
The study focuses on a model silicon quantum gate on a silicon-on-insulator (SOI) structure, with parameters comparable to state-of-the-art transistor technologies.
3：List of Experimental Equipment and Materials:
The modeled device includes a silicon film with a thickness of 3 nm, a 10-nm-thick SiO2 substrate, and a top gate insulator with a thickness of 3 nm and a relative dielectric constant of κ =
4：Experimental Procedures and Operational Workflow:
The CI method is used to assess the many-body eigenenergies, followed by parameterization to an effective Hamiltonian model. The Lindblad Master equation is then solved to evaluate device performance metrics.
5：Data Analysis Methods:
The derivative of the exchange between two dots is used to study the effect of gate voltage fluctuation, and quantum process tomography is employed to assess the impact of variability on quantum gate fidelity.
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