研究目的
To determine the possibility of using a phenomenological approach to describe strain relief in multilayered thin-film systems, especially in the layers of a step-graded MM buffer.
研究成果
The study demonstrates that the phenomenological approach, based on the existence of an energy limit, can be extended to multilayered thin-film systems to describe strain relief. The residual elastic strain in the dislocation-free layer is influenced by the incompletely relaxed structure of the underlying epilayer, broadening the possibilities for simulating step-graded MM buffers.
研究不足
The study is limited to two specific designs of MM buffers and does not explore the full range of possible configurations or materials. The phenomenological approach may not account for all variables in strain relief mechanisms.
1：Experimental Design and Method Selection:
The study involved growing two MHEMTs via molecular beam epitaxy (MBE) on a RIBER 32 MBE unit, with differing designs of MM buffers.
2：Sample Selection and Data Sources:
The MHEMTs were composed of InAlAs/InGaAs/InAlAs active layers with similar In mole contents.
3：List of Experimental Equipment and Materials:
A RIBER 32 MBE unit was used for growth, and X-ray investigations were conducted using a SmartLab 9 kW precision diffractometer.
4：Experimental Procedures and Operational Workflow:
The growth process involved changing the In mole content without interrupting growth, with specific substrate temperatures and growth rates. X-ray diffraction analysis was performed in two reflections, 004 and
5：Data Analysis Methods:
2 Reciprocal space maps were processed to determine the crystallographic parameters of the epilayers, and the residual elastic strains were calculated based on experimental data and the linear theory of elasticity.
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