研究目的
Investigating the relationship between ion implantation-induced defects and electrical characteristics, especially focusing on the leak failure rate in SiC IEMOSs and PN diodes.
研究成果
Ion implantation-induced defects lead to an increase in leak failure rates, and also enable a decrease in leak failure rates by raising the implantation temperature up to 600 °C.
研究不足
Further experiments are required to clarify the effect of ion implantation-induced defects on leakage current characteristics. Investigation of the relationship between ion implantation-induced defects and not only implantation temperature but also annealing temperature is future work.
1：Experimental Design and Method Selection:
The study involved the fabrication of IEMOSs and PN diodes using standard processes, with a focus on ion implantation and activation annealing.
2：Sample Selection and Data Sources:
Samples included IEMOSs and PN diodes fabricated under varying ion implantation temperatures.
3：List of Experimental Equipment and Materials:
Equipment used included a production-type ion implanter (ULVAC, IH-860DSIC), an induction-heating-type high-temperature annealing system (ULVAC, PFS-4000-5), and emission microscopy (Hamamatsu Photonics, PHEMOS-1000).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Ion implantation was performed at temperatures ranging from 200 °C to 600 °C, followed by activation annealing at 1600 °C and 1800 °C. Leakage current characteristics were then evaluated.
5：Data Analysis Methods:
Leakage points were analyzed using emission microscopy and reflection X-ray topography.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
