研究目的
To evaluate and improve the quality of hydrogenated poly‐Si thin films by investigating the behavior of hydrogen (H) atoms in polycrystalline silicon (poly‐Si) thin film.
研究成果
Hydrogenation significantly improves the quality of poly‐Si thin films by passivating defects, but excessive hydrogenation can degrade performance. The catalytic method is effective in preventing damage from charged particles. The cooling rate from 400°C is crucial for effective hydrogenation in TFTs.
研究不足
The study focuses on poly‐Si thin films on glass substrates, and the findings may not be directly applicable to other substrates or materials. The hydrogenation techniques discussed may have limitations in terms of scalability or integration with existing manufacturing processes.
1：Experimental Design and Method Selection:
The study involves the use of laser crystallization technology for fabricating LT poly‐Si, employing excimer laser crystallization (ELC) and continuous wave laser lateral crystallization (CLC). Hydrogenation techniques include plasma hydrogenation and catalytic hydrogenation.
2：Sample Selection and Data Sources:
Poly‐Si thin films on glass substrates were used, with thicknesses of 50–150?nm. Data acquisition methods include secondary ion mass spectroscopy (SIMS), electron paramagnetic resonance (EPR), and Raman microscopy.
3：List of Experimental Equipment and Materials:
Equipment includes PE‐CVD reactors, remote plasma reactors, and catalytic reactors. Materials include poly‐Si thin films and hydrogen gas.
4：Experimental Procedures and Operational Workflow:
Hydrogenation was performed at various conditions, followed by characterization techniques to assess the effects on mobility and defect passivation.
5：Data Analysis Methods:
Analysis of SIMS profiles, EPR signals, and Raman spectra to understand hydrogenation effects.
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polycrystalline silicon thin film
Used as the primary material for thin-film transistors (TFTs) on the backplane of liquid crystal displays and organic light‐emitting diode displays.
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excimer laser
KrF or XeCl
Used for excimer laser crystallization (ELC) of amorphous Si (a‐Si) thin films.
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diode‐pumped solid‐state laser
532?nm
Used for continuous wave laser lateral crystallization (CLC) of a‐Si thin films.
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PE‐CVD reactor
Used for plasma hydrogenation of poly‐Si thin films.
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remote plasma reactor
Used for hydrogenation under no electric‐field acceleration.
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catalytic reactor
Used for hydrogenation under no electric field, using an electrically heated tungsten (W) wire as the catalyzer.
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Raman microscope
Used for observing local vibrational modes (LVMs) in hydrogenated poly‐Si thin films.
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self‐aligned metal double‐gate (MeDG) CLC LT poly‐Si TFT
Used to evaluate the interaction between H and the performance of poly‐Si TFTs.
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