研究目的
Investigating the fabrication, optical properties, and photoelectrochemical performance of Cu2SrSnS4 thin film for potential photoelectric conversion applications.
研究成果
The study successfully prepared Cu2SrSnS4 thin films via a facial ball-milling method, revealing its formation process, suitable bandgap (1.78 eV), and carrier lifetime (2.06 ns) for high-efficiency solar cells. The photoelectrochemical tests demonstrated its potential as a p-type semiconductor with notable photocurrent density and stability, indicating its promise for photoelectric conversion applications.
研究不足
The porous nature of the Cu2SrSnS4 film prepared at 600 oC limits its direct application in solar cell devices, necessitating assembly into photoelectrochemical cells for photovoltaic performance analysis.
1：Experimental Design and Method Selection:
The study employs a facial ball-milling method for the preparation of Cu2SrSnS4 thin films, followed by sulfurization at various temperatures to investigate the formation process and properties of the films.
2：Sample Selection and Data Sources:
Precursor films were prepared by blade-coating a mixture of copper (II) acetate monohydrate, strontium (II) acetate, tin (II) chloride dihydrate, and thiourea in ethyl alcohol with diacetone as a dispersant.
3：List of Experimental Equipment and Materials:
X-ray diffractometer (Rigaku 3014), scanning electron microscopy (SEM, FEI Quanta-200), UV–vis–NIR Spectrophotometer (Hitachi U-4100), Photoluminescence (PL) characterization (FLS-980, Edinburgh), and a three-electrode system for photoelectrochemical tests.
4：Experimental Procedures and Operational Workflow:
The precursor films were sulfurized at temperatures ranging from 200 to 600 oC. The crystalline structures, surface morphology, optical properties, and photoelectrochemical performance of the films were characterized.
5：Data Analysis Methods:
The bandgap was estimated from absorbance tests, and carrier lifetime was calculated using biexponential function model from time-resolution photoluminescence data.
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