研究目的
To demonstrate the capability of elasto-electric coupling to probe the inner interfaces of semiconductor structures, specifically a buried silicon p-n junction, and to characterize the electric field distribution within such structures.
研究成果
The PWP method can be applied to study semiconductor structures with buried interfaces, providing a direct and non-destructive means to characterize the electric field distribution. The method allows for the discrimination of signals from different regions of the semiconductor structure, offering a powerful tool for studying new semiconductor materials and structures without requiring an electrical model.
研究不足
The duration of the pressure pulse is not yet sufficiently short to resolve the fine structure of the electric field distribution, limiting the spatial resolution of the measurements.
1：Experimental Design and Method Selection:
The Pressure-Wave-Propagation (PWP) method was used to measure the electric field distribution in semiconductor structures. This method involves generating a pressure pulse that moves charges within the material, producing an electrical signal correlated with the electric field distribution.
2：Sample Selection and Data Sources:
Samples consisted of two differently doped semiconductor wafers bonded together, creating a buried p-n junction. Aluminum or platinum electrodes were vacuum deposited on each side.
3：List of Experimental Equipment and Materials:
High-power nanosecond-duration laser pulse for pressure pulse generation, aluminum target, phenyl salicylate for acoustic coupling, 50-MHz ultrasonic transducers for sample validation, and an oscilloscope with a 400-MHz-bandwidth amplifier for signal measurement.
4：Experimental Procedures and Operational Workflow:
The pressure pulse was generated by a laser pulse striking an aluminum target acoustically coupled to the sample. The resulting electrical signal was measured under open-circuit conditions to interpret it as an electric field distribution.
5：Data Analysis Methods:
The signal was analyzed to identify peaks corresponding to the electric field at the electrodes and the buried junction. The contact potential at the buried junction was estimated and compared to theoretical values based on semiconductor doping.
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