摘要： We have demonstrated a near-field scanning microscopy (NSOM) based on an atomic force microscope (AFM) for characterization of high dielectric constant materials. The NSOM is applied to measure the dielectric constant of high dielectric constant materials by using a near-field microwave microscope. The NSOM is based on a cantilever with a sharp tip that is used to scan the sample surface. The microwave signal is applied to the tip and the reflected signal is detected by a microwave detector. The dielectric constant of the sample is determined by the phase shift of the reflected signal. The NSOM can measure the dielectric constant of materials with high spatial resolution. The NSOM is used to measure the dielectric constant of high dielectric constant materials such as BaTiO3, SrTiO3, and Pb(Zr,Ti)O3. The dielectric constant of these materials is measured with high accuracy and high spatial resolution.