研究目的
Investigating the effects of different RF powers on the stress and refractive index of SiNx films fabricated via PECVD for thin film encapsulation in AMOLED displays.
研究成果
Multilayer SiNx films with optimized RF power significantly improve the reliability and RA life time of OLED displays under high humidity and temperature conditions.
研究不足
The study is limited to the effects of RF power on SiNx film properties and does not explore other PECVD parameters or alternative encapsulation materials.
1：Experimental Design and Method Selection:
The study systematically varied RF power in PECVD to fabricate SiNx films, analyzing stress and refractive index to optimize film performance.
2：Sample Selection and Data Sources:
SiNx films were prepared under fixed conditions except for RF power, which was varied.
3：List of Experimental Equipment and Materials:
PECVD equipment was used for SiNx deposition, with specific gases (SiH4, NH3, N2, H2) and conditions (80 °C, 1μm thickness).
4：Experimental Procedures and Operational Workflow:
OLED devices were fabricated, encapsulated with SiNx films under different RF powers, and tested under high humidity and temperature.
5：Data Analysis Methods:
Stress and refractive index of SiNx films were measured, and the RA life time of OLED devices was evaluated.
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