研究目的
To discuss the properties and applications of silicon dioxide (SiO2) in semiconductor devices, focusing on its use in the local oxidation of silicon (LOCOS) for lateral isolation in MOS and bipolar devices.
研究成果
LOCOS-based isolation techniques have been widely used in the semiconductor industry for lateral isolation in MOS and bipolar devices. Despite their limitations, such as bird's beak formation and field oxide thinning, these techniques have been successfully scaled down to deep-submicrometer technology generations. Various LOCOS variants and non-LOCOS isolation techniques have been developed to address these limitations, with STI being the most notable for its high potential for scaling into deep-submicrometer technology generations.
研究不足
The main limitations of LOCOS-based isolation techniques include lateral encroachment or bird's beak formation, field oxide thinning in narrow field regions, and the need for optimization of stress levels to minimize defects in the silicon substrate. Scaling down LOCOS to smaller dimensions requires careful control of active area and field region dimensions without degrading other characteristics.
