研究目的
Investigating the effects of an Al2O3 protecting layer on the performance of In2O3/ITO thin film thermocouples at high temperatures and over long-term service.
研究成果
The Al2O3 protecting layer significantly enhances the high-temperature performance and longevity of In2O3/ITO TFTCs by reducing film volatilization. The TFTCs with the protecting layer exhibited a stable Seebeck coefficient of 131.7 μV/°C and a drift rate of 3.05 °C/h at 1250 °C, outperforming those without the protecting layer.
研究不足
The study focuses on the performance of In2O3/ITO TFTCs with an Al2O3 protecting layer at high temperatures up to 1250 °C. The long-term stability beyond 10 hours and the effects of other protecting materials or methods were not explored.
1：Experimental Design and Method Selection:
The study involved fabricating In2O3/ITO TFTCs with and without an Al2O3 protecting layer on alumina substrates. The In2O3 and ITO thin films were prepared using radio frequency magnetron sputtering, and the Al2O3 protecting layer was applied via traditional spin-coating methods. The samples were sintered at 1250 °C for durations ranging from 2 to 10 hours to study the effects of the protecting layer on microstructure and thermoelectric properties.
2：Sample Selection and Data Sources:
Al2O3 substrates of specific dimensions were used. The samples were characterized using XRD, SEM for microstructure analysis, and thermoelectric properties were measured using a high-temperature furnace and data recorder.
3：List of Experimental Equipment and Materials:
Equipment included a radio frequency magnetron sputtering system, spin coater, high-temperature furnace, XRD meter, SEM, and data recorder. Materials included ITO and In2O3 targets, Al2O3 substrate, aluminum nitrate, ethylene glycol monomethyl ether, PVP, and silver paste.
4：Experimental Procedures and Operational Workflow:
The process involved substrate cleaning, thin film deposition, photolithography for patterning, annealing, application of the protecting layer, and attachment of copper wires for electrical measurements.
5：Data Analysis Methods:
XRD patterns were analyzed for crystal structure, SEM images for microstructure and thickness, and thermoelectric properties were analyzed for Seebeck coefficient and drift rate.
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