摘要： In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The recent emergence of barrier infrared detectors such as the nBn [1] and the XBn [2] have resulted in mid-wave infrared (MWIR) and long-wave infrared (LWIR) detectors with substantially higher operating temperatures than previously available in III-V semiconductor based MWIR and LWIR detectors. The initial nBn devices used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2 μm and ~4 μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5 μm) MWIR atmospheric transmission window. There also have been nBn detectors based on the InAs/GaSb T2SL absorber [3,4].