摘要： In this work, highly (0002) oriented ZnO piezoelectric films were deposited on high acoustic velocity SiC substrates. Surface acoustic wave (SAW) devices on ZnO/SiC layered structure operating in the fundamental mode with high frequency to 7 GHz range were successfully fabricated for the first time. The comprehensive experimental and theoretical investigations about phase velocities Vp, the electromechanical coupling coefficients K2 and quality factors Q of one-port SAW resonators have been studied considering various ZnO normalized thickness h/λ. The resonators with large K2 and high Q are implemented over 5–7 GHz demonstrating K2 of 0.47%–2.83% and Q of 149–549. Specifically, a high K2 of 2.83% and large Q of 549 are simultaneously achievable for the resonator at 5.19 GHz. Finally, with the high Vp of ZnO/SiC structure being up to 6800 m/s at h/λ=0.14, a 6.8 GHz SAW filter was achieved. Our work shows ZnO/SiC structure is of great potential for high frequency SAW devices application.